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Two-Facing-Targets 스퍼터 장치에 의해 제작한 Ti-Al 합금박막의 결정화에 관한 연구
한창석,입호야수 대한금속재료학회(대한금속학회) 2001 대한금속·재료학회지 Vol.39 No.3
The binary system Ti-Al intermetallic compound thin films were deposited on Corning glass and silicon wafer substrate by a two-facing-targets sputtering system using two binary Ti-Al alloy targets with stoichiometric composition. The crystallization process of the Ti-Al thin film has been studied by X-ray diffraction, field-emission scanning electron microscope and transmission electron microscope. The as-deposited films are amorphous phase when deposited at ambient temperature. The Ti-Al films deposited were annealed at 773-973 K. When annealed at 778 and 873 K, the films deposited on the corning glass substrate were crystallized into Ti₃Al and Ti₂Al_5 phases. Ti₃Al, Ti₂Al_5 and TiAl phases were obtained after annealed at 973 K. Crystallization behavior of Ti-Al films deposited on silicon wafer substrate, when annealed at 773 K, was the same as the case of corning glass substrate. On the other hand, when annealed at 823 K, the films were crystallized into Ti₃Al, Ti₂Al_5, α-Ti(Al) and Ti_7Al_5Si_(12) phases. When annealed above 873 K, α-Ti(Al) and Ti_7Al_5Si_(12) phases still remained. The results of the selected area electron diffraction patterns analyses are consistent with XRD results.
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기판가열 및 열처리에 의한 Ti-Al 합금박막의 상변태
한창석,입호야수 대한금속재료학회(대한금속학회) 2001 대한금속·재료학회지 Vol.39 No.7
Ti-Al intermetallic compound thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773K by using a two-facing-targets-type DC sputtering system. Atomic compositions of the binary Ti-Al alloy targets are Ti-rich(75Ti-25Al(atm%)), stoichiometry(50Ti-50Al(atm%)) and Al-rich(25Ti-75Al(atm%)). The crystallization processes and phase transformations of Ti-Al thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy and transmission electron microscopy. The as-deposited films were also annealed successively and isothermally at different annealing temperatures of 773, 873 and 973K. The microhardness of Ti-Al thin films was measured by a dynamic hardness tester. The crystallized phases of as-deposited films, deposited at room temperature and elevated substrate temperatures, were different. Phase transformations during annealing treatment are α-Ti+Ti₃Al→α-Ti+Ti₃Al for Ti-rich films, amorphous/Ti+(Al)→TiAl+Ti₂Al_5+Ti₃Al for stoichiometry and Al+(Ti)/TiAl₂/Ti₂Al_5→α-TiAl₃/Ti₂Al/TiAl₃ for Al-rich films. The analyses of the selected area electron diffraction patterns were in accord with X-ray diffraction results. The above results are discussed in terms of crystallized phases and microhardness.
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