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p 형 반도체 층의 Mg 델타 도핑을 이용한 센서 광원 용 LED의 성능 향상
김유경 ( Yukyung Kim ),이승섭 ( Seungseop Lee ),전주호 ( Juho Jeon ),김만경 ( Mankyung Kim ),장수환 ( Soohwan Jang ) 한국센서학회 2022 센서학회지 Vol.31 No.1
The efficacy improvement of the light emitting diode (LED) was studied for the realization of small-size, low power consumption, and highly sensitive bio-sensor instrument. The performance of the LED with Mg delta-doping at the interface of AlGaN/GaN superlattice in p type cladding layer was simulated. The device with Mg delta-doping showed improved current, radiative recombination rate, electroluminescence, and light output power compared to the conventional LED structure. Under the bias condition of 5 V, the improved device exhibited 20.8% increase in the light output power. This is attributed to the increment of hole concentration from stable ionization of Mg in p type cladding layer. This result is expected to be used for the miniaturization, power saving, and sensitivity improvement of the bio-sensor system.
권재준(Jaejoon Kwon),이정목(Jeongmok Lee),이승섭(Seungseop Lee),정승민(Seungmin Jung),최재영(Jaeyoung Choi) 한국자동차공학회 2020 한국자동차공학회 부문종합 학술대회 Vol.2020 No.7
Recently, the automotive industry is facing a transition to the MECA(Mobility, Electrification, Connectivity and Autonomous driving) era. In order to transition to the MECA era, it is essential to shorten the vehicle development cycle, and it is necessary to convert the conventional physical development environment into a virtual development environment. In the virtual development environment, early performance development and sufficient verification are possible in the early stages of design, thereby ensuring efficient quality. In this paper, the design process for MDPS steering feel performance prediction and early performance development using HILS-based virtual development environment is proposed.
게이트 하부 식각 구조 및 HfO<sub>2</sub> 절연층이 도입된 AlGaN/GaN 기반 전계 효과 트랜지스터
김유경 ( Yukyung Kim ),손주연 ( Juyeon Son ),이승섭 ( Seungseop Lee ),전주호 ( Juho Jeon ),김만경 ( Man-kyung Kim ),장수환 ( Soohwan Jang ) 한국화학공학회 2022 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.60 No.2
HfO<sub>2</sub>을 게이트 산화막으로 갖는 AlGaN/GaN 기반 고이동도 전계효과 트랜지스터(high electron mobility transistor, HEMT)의 노멀리 오프(normally-off) 작동 구현을 위하여 게이트 리세스(gate-recess) 깊이에 따른 소자 특성이 시뮬레이션을 통하여 분석되었다. 전통적인 HEMT 구조, 3 nm의 두께를 갖는 게이트 리세스된 HEMT 구조, 게이트 영역에 AlGaN 층을 갖지 않는 HEMT 구조가 모사되었다. 전통적인 HEMT 구조는 노멀리 온(normally-on) 특성을 나타내었으며, 0 V의 게이트 전압 및 15 V의 드레인 전압 환경에서 0.35 A의 드레인 전류 특성을 나타내었다. 3 nm의 두께를 갖는 게이트 리세스된 HEMT 구조는 2DEG(2-dimensional electron gas) 채널의 전자 농도 감소로 인해, 같은 전압 인가 조건에서 0.15 A의 드레인 전류 값을 보였다. 게이트 영역에 AlGaN 층을 갖지 않는 HEMT 구조는 뚜렷한 노멀리 오프 동작을 나타내었으며, 0 V의 동작전압 값을 확인할 수 있었다. AlGaN/GaN based HfO<sub>2</sub> MOSHEMT (metal oxide semiconductor high electron transistor) with different gate recess depth was simulate to demonstrate a successful normally-off operation of the transistor. Three types of the HEMT structures including a conventional HEMT, a gate-recessed HEMT with 3 nm thick AlGaN layer, and MIS-HEMT without AlGaN layer in the gate region. The conventional HEMT showed a normally-on characteristics with a drain current of 0.35 A at V<sub>G</sub> = 0 V and V<sub>DS</sub> = 15 V. The recessed HEMT with 3 nm AlGaN layer exhibited a decreased drain current of 0.15 A under the same bias condition due to the decrease of electron concentration in 2DEG (2-dimensional electron gas) channel. For the last HEMT structure, distinctive normally- off behavior of the transistor was observed, and the turn-on voltage was shifted to 0 V.