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AZO 박막의 증착 및 열처리 조건에 따른 전기·광학적 특성
연응범,이택영,김선태,임상철,Yeon, Eung-Beom,Lee, Taek-Yong,Kim, Seon-Tai,Lim, Sang-Chul 한국재료학회 2020 한국재료학회지 Vol.30 No.10
AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al<sup>3+</sup> ions of relatively small ion radius are substituted for Zn<sup>2+</sup> ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al<sub>2p</sub> and O<sub>ll</sub> increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 10<sup>19</sup> cm<sup>-3</sup> of carrier concentration, 8.4 cm<sup>-2</sup>/V·s of mobility and 1.2 × 10<sup>-2</sup> Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.
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산소 혼합 비율에 따른 RF 스퍼터링 ZnO 박막과 n-ZnO/p-Si 이종접합 다이오드의 특성
권익선,김단비,김예원,연응범,김선태,Gwon, Iksun,Kim, Danbi,Kim, Yewon,Yeon, Eungbum,Kim, Seontai 한국재료학회 2019 한국재료학회지 Vol.29 No.7
ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.
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