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나노초 펄스 레이저 응용 사파이어/실리콘 웨이퍼 미세 드릴링
김남성(Nam Sung Kim),정영대(Young Dae Chung),성천야(Chun Yah Seong) Korean Society for Precision Engineering 2010 한국정밀공학회지 Vol.27 No.2
Due to the rapid spread of mobile handheld devices, industrial demands for micro-scale holes with a diameter of even smaller than 100㎛ in sapphire/silicon wafers have been increasing. Holes in sapphire wafers are for heat dissipation from LEDs; and those in silicon wafers for interlayer communication in three-dimensional integrated circuit (IC). We have developed a sapphire wafer driller equipped with a 532㎚ laser in which a cooling chuck is employed to minimize local heat accumulation in wafer. Through the optimization of process parameters (pulse energy, repetition rate, number of pulses), quality holes with a diameter of 30㎛ and a depth of 100㎛ can be drilled at a rate of 30holes/sec. We also have developed a silicon wafer driller equipped with a 355㎚ laser. It is able to drill quality through-holes of 15μm in diameter and 150㎛ in depth at a rate of 100holes/sec.