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다결정 실리콘 태양전지 제조를 위한 비정질 알루미늄 유도 결정 입자 특성
정혜정(Jeong, Hyejeong),김호성(Kim, Ho-Sung),이호재(Lee, Ho-Jae),부성재(Boo, Seongjae) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.11
본 연구에서는 증착법에 의해 제조된 다결정 실리콘을 이용한 태양전지 제작과 관련하여 다결정 실리콘 씨앗층 제조를 위한 기판에 대하여 연구를 수행하였다. 다결정 실리콘 씨앗층을 제조할 수 있는 기술중 aluminum-induced layer exchange(ALILE) 공정을 이용하여 다결정 실리콘 씨앗층을 제조하였다. glass/Al/oxide/a-Si 구조로 알루미늄과 비정질 실리콘 계면에 알루미늄 산화막을 다양한 두께로 형성시켜, 알루미늄 유도 결정화에서 산화막의 두께가 결정화 특성에 미치는 영향, 결정결함, 결정크기에 대하여 연구하였다. 형성된 다결정 실리콘 씨앗층 막의 특성은 OM, SEM, FIB, EDS, Raman spectroscopy, XRD, EBSD 을 이용하여 분석하였다. 그 결과 산화막의 두께가 증가할수록 결함도 함께 증가하였다. 16nm 두께의 산화막 구조에서 <111> 방향의 우선배향성을 가진, 10{mu}m의 sub-grain 결정립을 갖는 씨앗층을 제조 하였다.
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정혜정(Jeong, Hyejeong),오광환(Oh, Kwang H.),이종호(Lee, Jong Ho),부성재(Boo, Seongjae) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.06
We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/Al₂O₃/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of Al₂O₃ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and Al₂O₃ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of Al₂O₃ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about 45{mu}m at the Al₂O₃ layer thickness of 4 nm. The preferential crystal orientation was <111> and more dominant with the thinner Al₂O₃ layer. In summary, we obtained a pc-Si film not only with {sim}45{mu}m grain size but also with the crystallinity of about 75% at 4 nm Al₂O₃ layer thickness by ALILE process with the structure of a glass/Al/Al₂O₃/a-Si.
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Glass/Al/Al₂O₃/a-Si 구조의 알루미늄유도 결정화에서 산화막 두께 변화가 실리콘 결정립에 미치는 영향
오광환(Oh Kwang Hwan),정혜정(Jeong Hyejeong),지은옥(Chi Eun-Ok),김지찬(Kim Ji Chan),부성재(Boo Seongjae) 한국태양에너지학회 2010 한국태양에너지학회 학술대회논문집 Vol.2010 No.4
Characteristics of crystallization of amorphous silicon (a-Si) utilizing aluminum-induced crystallization (AIC) and layer exchange process with a glass/Al/Ox/a-Si structure are investigated in this paper. The fabrication of polycrystalline silicon (pc-Si) seed layer for a pc-Si thin film solar cell with the maximum grain size of 45 ㎛ in length is carried out by appropriately adjusting the oxide film thickness and annealing temperature. Aluminum oxide (Al₂O₃) film which plays a significant role as the buffer layer between Al and amorphous silicon (a-Si) films was sputtered on the Al/glass bilayer with the different thicknesses. The a-Si was deposited on the Al₂O₃ thin film by plasma enhance chemical vapor deposition (PECVD) method. The workpieces were heated for two hours to induce AIC process at three different temperatures of 450, 500 and 550℃. Once the a-Si was crystallized by AIC process, the silicon peak of 520 ㎝?¹ from Raman spectroscopy analysis was detected regardless of Al₂O₃ layer thickness even if the degree of crystallization can exist. The Si grains with an average size ranging from 25 to 45 ㎛ can be fabricated with the same thickness ratio of a-Si/Al. From X-ray diffraction (XRD) data, the dominant crystal orientation of Si(111) together with Si(202), Si(220), Si(311) and Si(400) is found at the relatively high temperature over 500℃ whereas no Si crystal peak except Si(202) can be obtained at 450℃ after annealing. The effects of process variables such as buffer layer thickness, annealing temperature and heating time upon the AIC results including grain size and orientation of pc-Si are demonstrated in detail.
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오광환(Oh, Kwang H.),정혜정(Jeong, Hyejeong),지은옥(Chi, Eun-Ok),김지찬(Kim, Ji Chan),부성재(Boo, Seongjae) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.06
Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/SiO₂/a-Si, in which the SiO₂ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the SiO₂ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of 3{sim}4{mu}m under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/SiO₂/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, SiO₂ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a 30{times}30 micron-sized hole array with a diameter of 1{sim}2{mu}m was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of 3{sim}4{mu}m with the workpiece.
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