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RISS 인기검색어
- 검색키워드
- 저자 : Ravindra Naik, Bukke (검색결과 2 건)
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(A) Study on Metal-Oxide Based High-k Dielectrics and Semiconductors for Thin-film Transistors
BUKKE RAVINDRA NAIK 경희대학교 대학원 2022 국내박사
The performance of metal-oxide thin-film0transistors (TFTs) plays a vital0role in the applications of next-generation displays. 0Metal-oxide TFTs have been0widely used0for display applications0and sensor arrays0over the past decade0due to their high0mobility (~10 cm2V-1s-1), excellent0large-area uniformity, and0good electrical0stability. However, oxide TFTs such as a-IGZO TFTs generally exhibit relatively low field-effect0mobility (FE) of ~ 10 cm2V-1s-1, which are relatively low mobility for applying high PPI AMOLED backplane applications. Therefore, high mobility, stable under bias stress, is required to develop oxide semiconductor materials and devices. Both the vacuum and solution processes can be used to fabricate the TFT. The solution process, such as0spin coating, inkjet0printing, spray pyrolysis, etc., has advantages in manufacturing cost and maintenance compared to its counterpart. However, solution-processed oxide TFTs' high mobility with excellant stability (bias stress and long term) is a critical issue to be solved. High mobility and excellent stability of amorphous oxide-based hysteresis-free n-channel and p-channel TFT are prerequisites for the high performance of complementary metal-oxide semiconductors (CMOS). To improve these parameters, a high-quality interface0between a semiconductor layer and gate insulator is necessary. This thesis has developed the high-k gate insulator and the semiconductor materials via a novel precursor solution synthesis route i.e., purification of metal oxide precursors (high-k dielectrics and the semiconductors). The high-quality film (i.e., gate insulator and channel layer) is required for superior TFT performance. The impurities0in the precursor solutions make the film with poor0quality, which a higher annealing temperature could improve, but a high temperature is0not suitable for flexible0substrates. To address the issues mentioned above, the0preparation methods0of MOs precursor solution0with high purity0were reported; for example, chemical combustion, purification, and thermally purification solution (TPS) process0could lead to0chemical reactions0together with0pre-hydrolysis by0thermal energy in0the MO-based precursor0solution. These0chemical reactions can0improve the MO0film quality. Likewise, 0the chemical additives0(such as solvents,0stabilizers, and0dopants) and0simple precursor0modification routes0(for example, TPS,0gels) are0used to0obtain better semiconducting0materials, which provides0a good quality (i.e., continuous0as well as0crack free) thin film0at low temperatures. Integration of good quality film in the TFT could provide higher mobility. However, high mobility along with bias stability is one of the major issues to be considered. The issue, as mentioned above, is motivated to perform this work. Therefore, developing high-quality gate insulators and n-/p-type MO semiconductor layers becomes essential for high-performance, low-power electronics for next-generation display applications.
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