본논문에서는칩렛환경의다이-투-다이인터페이스를위한고속· 저전력· 고 신뢰성트랜시버를구현한두개의칩을기술한다. 첫번째칩은42 Gb/s의고속에서 0.275 pJ/b의에너지효율을달성하는단일종...

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https://www.riss.kr/link?id=T17450030
서울 : 서울대학교 대학원, 2026
2026
영어
Die-to-Die(D2D) ; chiplet ; memory interface ; short-reach ; simultane- ous bidirectional (SBD) ; pulse amplitude modulation (PAM) ; capacitive driving ; PVT/mismatch tracking ; clock-referenced PAM3 (CR-PAM3) ; noise tolerance ; DFE- embedded SA ; fractional-spaced puller (FS-puller) ; capacitive driving simultaneous bidirectional (CD-SBD) ; CoWoS ; crosstalk ; AC/DC replica ; QEC ; DCC ; Quad-gen ; per-lane CDR ; DLL ; reference offset
621.3
서울
x, 97 ; 26 cm
지도교수: 최우석
I804:11032-000000194558
0
상세조회0
다운로드본논문에서는칩렛환경의다이-투-다이인터페이스를위한고속· 저전력· 고 신뢰성트랜시버를구현한두개의칩을기술한다. 첫번째칩은42 Gb/s의고속에서 0.275 pJ/b의에너지효율을달성하는단일종...
본논문에서는칩렛환경의다이-투-다이인터페이스를위한고속· 저전력· 고
신뢰성트랜시버를구현한두개의칩을기술한다. 첫번째칩은42 Gb/s의고속에서
0.275 pJ/b의에너지효율을달성하는단일종단클럭레퍼런스PAM3 (CR-PAM3)
트랜시버를제안한다. 제안된CR-PAM3 신호방식은포워드된클록을기준전압으
로활용함으로써, 단일종단다이-투-다이인터페이스에서발생하는공급노이즈와
기준전압오프셋에대한내성을제공한다. PAM3의전력소모를최소화하기위해
차등가중데이터드라이버를사용하였으며, 제안된XTC-결합FS 풀러는인접채널
로부터의FEXT를상쇄하면서전압레벨전환을촉진한다. DFE가내장된샘플러는
CML 서머구조를제거하고탭브랜치를샘플러에직접추가함으로써1 UI 이내의
저전력피드백을가능하게한다. 프로토타입칩은28 nm CMOS 공정에서구현되
었다.
두번째칩은56 Gb/s의고속에서0.292 pJ/b의에너지효율을달성하는캐패
시티브구동동시양방향(CD-SBD) 트랜시버를기술한다. 제안된CD-SBD 신호
방식은SBD 구조에서의전력소모와자기간섭(self-interference)을감소시킨다. 하
이브리드구조에서의불일치와PVT 변동을최소화하기위해AC/DC 레플리카회로
및PVT/불일치추적기법을제안하였다. 특히PVT/불일치추적은CDR이활용하는
데이터및엣지샘플정보만을재사용함으로써추가하드웨어없이PVT 강건성을
제공한다. 레인별CDR과QEC/DCC 기능을포함한직교클럭생성기는최소한의전
력및면적오버헤드로충분한클록마진을확보한다. 해당트랜시버는-6.5 dB에서
-11.5 dB까지의채널손실, 0.93–1.2 V의공급전압, 0–80 °C의온도변화환경에서
¡1e-12의BER을유지한다. 프로토타입칩은28 nm CMOS 공정에서구현되었다.
다국어 초록 (Multilingual Abstract)
This paper describes two chips for high data rate, low power, robust transceiver for die-to-die interface in chiplet. The first chip describes a single-ended clock-referenced PAM3 (CR-PAM3) transceiver that achieves an energy efficiency of 0.275 pJ/b ...
This paper describes two chips for high data rate, low power, robust transceiver for
die-to-die interface in chiplet. The first chip describes a single-ended clock-referenced
PAM3 (CR-PAM3) transceiver that achieves an energy efficiency of 0.275 pJ/b at a
high data rate of 42 Gb/s. The proposed CR-PAM3 signaling provides tolerance to
supply noise and reference offset in single-endeddie-to-die interfaces by using for-
warded clock as reference voltages. To minimize power consumption for PAM3, a dif-
ferentially weighted data driver is employed. The proposed XTC-combined FS puller
helps voltage level transition while canceling FEXT from adjacent channels. A DFE-
embedded sampler enables low-power feedback within 1 UI by eliminating the CML
summer structure and directly adding a tap branch to the sampler. Prototype chip was
implemented in a 28 nm CMOS technology. The second chip describes a capacitively
driven simultaneous bidirectional (CD-SBD) TRX that achieves an energy efficiency
of 0.292 pJ/b at a high data rate of 56 Gb/s. The proposed CD-SBD signaling re-
duces power and self-interference in SBD. To minimize mismatch and PVT variation
in hybrid, AC/DC replica and PVT/mismatch tracking are proposed. PVT/mismatch
tracking provides PVT robustness without extra hardware, reusing only data and edge
sample information that CDR utilizes. Per-lane CDR and a quadrature generator with
QEC/DCC secure clock margin, with minimal power and area overhead. The TRX
sustains ¡1e-12 BER across -6.5 to -11.5dB loss, 0.93-1.2V supply, and 0-80°C tem-
perature variation. Prototype chip was implemented in a 28 nm CMOS technology.
목차 (Table of Contents)