As the demand for electronic devices operating in high-temperature environments increases, research on lead-free dielectric ceramics that satisfy both stable dielectric properties and high reliability is being actively conducted. In particular, Multi-...
As the demand for electronic devices operating in high-temperature environments increases, research on lead-free dielectric ceramics that satisfy both stable dielectric properties and high reliability is being actively conducted. In particular, Multi-Layer Ceramic Capacitors (MLCCs) are subjected to DC-bias electric fields alongside AC signals in practical operating conditions, which can lead to performance degradation such as reduced permittivity and increased dielectric loss. These issues become more pronounced under high-temperature conditions; thus, securing stable dielectric properties under simultaneous high-temperature and DC-bias conditions is recognized as a critical challenge in the development of dielectric materials for MLCCs.
In this study, a dual-site engineering strategy that simultaneously controls the A-site and B-site was proposed to enhance the high-temperature dielectric stability and DC-bias reliability of BaTiO3-based lead-free dielectric ceramics. To this end, (Ba1-x(Bi0.5Na0.5)x)(Ti0.9Sn0.1)O3(BBN-TS) ceramics were synthesized, and the effects of Bi3+/Na+ A-site substitution and Sn4+ B-site substitution on the crystal structure, microstructure, and dielectric properties were systematically analyzed. X-ray diffraction (XRD) analysis confirmed the formation of a pseudocubic perovskite structure at compositions of x ≥ 0.2, with lattice contraction and promoted grain growth observed as the substitution amount increased.
Dielectric property analysis revealed that the Bi3+/Na+ and Sn4+ substitutions induced relaxor ferroelectric behavior, effectively suppressing dielectric loss while broadening the permittivity peak. Specifically, the x = 0.8 composition maintained a high permittivity of approximately 3,000 and exhibited excellent dielectric stability over a wide temperature range of 67– 332 °C. Impedance spectroscopy confirmed that the electrical conduction behavior is predominantly governed by grain boundaries, and the Schottky barrier height increased with higher substitution levels, contributing to the reduction of dielectric loss in high-temperature regions. Furthermore, the Sn substitution significantly stabilized the dielectric properties under DC-bias and effectively suppressed thermal hysteresis.
These results suggest that the synergistic substitution of Bi3+/Na+ and 10 mol% Sn4+ alleviates the excessive structural anisotropy in the BT–BNT based system and stabilizes the relaxor phase, thereby ensuring superior dielectric performance even under high-temperature and DC-bias conditions. This study presents a new direction for designing high-reliability lead-free dielectric ceramics through dual-site engineering and suggests their potential for next-generation high-temperature MLCC applications. Key words : Temperature stability, DC-bias, lead-free, relaxor, dielectric.