Study on control of thermal flow in CVD chamber with showerhead and baffle

다국어 초록 (Multilingual Abstract)

Chemical Vapor Deposition (CVD) is a key thin-film process for manufacturing high-performance semiconductor devices, and the flow and heat-transfer characteristics inside the chamber are critical factors that determine film quality. In vertical CVD chambers, structural components such as the showerhead and baffle directly influence fluid flow and temperature distribution, making precise analysis and control essential.
Previous studies have commonly focused on adjusting process conditions such as flow rate, pressure, or temperature to improve chamber flow and heat transfer performance, but such approaches often increase operational complexity. This study instead examines whether flow, heat transfer, and mass transfer uniformity can be improved through structural modifications, specifically by incorporating showerheads and baffles, without altering complex process conditions.
To analyze and enhance the internal flow field of the CVD chamber, Computational Fluid Dynamics (CFD) simulations and Particle Image Velocimetry (PIV) experiments were conducted. Numerical analyses were performed for various baffle shapes (flat, curved) and sizes, and the resulting heat transfer and mass transfer distributions above the susceptor were evaluated. The results showed that applying a 30 mm flat baffle improved heat transfer uniformity by 25% and mass transfer uniformity by 22% compared to the no baffle case, demonstrating its effectiveness in stabilizing radial flow behavior.
To ensure the reliability of the numerical results, PIV experiments were performed in parallel, and comparisons between the measured flow fields and CFD predictions were used to assess the validity of the simulation model.
This study confirms that simple structural modifications can effectively enhance thermal fluid uniformity inside a CVD chamber without modifying complex process conditions. The combined numerical and experimental analysis also provides a basis for understanding how design parameters influence internal flow behavior, supporting future chamber design optimization.

목차 (Table of Contents)

• Chapter 1. Introduction 1
• 1.1 Background of study 1
• 1.2 CVD process 4
• 1.3 Purpose and methodology of study 7
• 1.3.1 Purpose of study 7
• 1.3.2 Methodology of study 8
• Chapter 2. Fundamental theories 10
• 2.1 Theoretical background 10
• 2.2 Flow visualization using Particle Image Velocimetry(PIV) 15
• Chapter 3. Numerical analysis 17
• 3.1 Configuration of numerical simulation model 17
• 3.1.1 Geometry of CVD chamber and computational domain 17
• 3.1.2 Showerhead and baffle configuration 21
• 3.1.3 Analysis method and boundary conditions 25
• 3.1.4 Validation of CFD simulation using PIV experiment 34
• 3.2 Flow analysis according to baffle 38
• 3.2.1 Mesh independence test 38
• 3.2.2 Flat baffle condition 44
• 3.2.3 Curved baffle condition 47
• 3.3 Flow field and uniformity analysis 50
• 3.3.1 Effect of baffle 50
• 3.3.2 Effect of process gap 55
• Chapter 4. Experimental results 65
• 4.1 PIV experiment 65
• 4.1.1 Chamber design 65
• 4.1.2 Experimental setup 70
• 4.1.3 Uncertainty analysis 73
• 4.2 Results of experiment 77
• 4.2.1 Flow field analysis for temperature 78
• 4.2.2 Flow field analysis for flow rate 79
• Chapter 5. Conclusion 94
• References 97