In this thesis, a 7-bit 1.5GS/s area-efficient asynchronous charge injection successive-approximation-register (SAR) analog-to-digital converter (ADC) is presented. The proposed ADC architecture consists of a 6-bit CI-SAR and a 1-bit Metastability Det...
In this thesis, a 7-bit 1.5GS/s area-efficient asynchronous charge injection successive-approximation-register (SAR) analog-to-digital converter (ADC) is presented. The proposed ADC architecture consists of a 6-bit CI-SAR and a 1-bit Metastability Detector (MD), forming a 7-bit ADC. Superior area efficiency is achieved by architecting the Charge Injection digital-to-analog converter (DAC) in a segmented structure. The Charge Injection Cell (CIC) is biased by a temperature-aware bias generator that maintains the ADC full-scale over a wide temperature range. The gm-boosted StrongARM comparator helps achieve high sampling speed up to 1.5GS/s. A background-calibrated metastability-detector extracts an additional bit under different process, voltage, and temperature (PVT) conditions. The proposed ADC is fabricated in a 28nm CMOS process in an area of 202μm2. The peak SNDR is 39.04dB with FoMw = 17.4fJ/conv.-step. The measured SNDR drops by less than 2.7dB across the -40°C to 80°C temperature variation and 0.9V to 1.1V supply voltage variation.