Monolithic 3D Integration of NMOSFETs and Hysteresis-Free Top-Gated Single-Walled Carbon Nanotube FETs for Micro-LED Driver Applications

다국어 초록 (Multilingual Abstract)

Monolithic 3D (M3D) integration technology offers a path to ultra-high resolution, low latency, and energy-efficient circuits required for interactive VR/AR displays. This study demonstrates the implementation of M3D complementary logic by vertically integrating hysteresis-free p-type top-gated single-walled carbon nanotube (SWNT) field-effect transistors (FETs) and n-type metal-oxide FETs (NMOSFETs). Hysteresis suppression is achieved through spin-on glass (SOG) and HfO₂ encapsulation, enabling stable and reliable SWNT operation. The resulting CMOS inverters exhibit low power consumption, high reliability, and reduced photocurrent due to the top-gated structure critical for high-resolution active-matrix display backplanes. The feasibility of this approach is validated by directly driving red and blue micro-LEDs with the complementary inverter scheme within a 5 V supply, confirming full pixel-level functionality through monolithic integration. This scalable M3D strategy meets stringent power and pixel-density requirements, advancing heterogeneous channel material integration for next-generation AR/VR display technologies.

목차 (Table of Contents)

• Abstract i
• Table of Contents ii
• List of Tables iii
• List of Figures iv
• Chapter 1 Introduction 1
• 1.1 Background of Micro-LED technology 1
• 1.2 Advantages of M3D in Micro-LED Backplanes 3
• 1.3 Compatibility of SWNTs in monolithic 3D (M3D) integration 7
• Chapter 2 Experimental Details 9
• 2.1 Device Fabrication Process 9
• Chapter 3 Results and Discussions 12
• 3.1 Device Characterization 12
• 3.2 Complementary Inverter 26
• 3.3 Display Applications 31
• Chapter 4 Conclusion 33
• References 34
• 국문초록 39
• Acknowledgements 40
• Curriculum Vitae 42