Thermoelectric (TE) materials can efficiently convert waste heat into electricity and vice versa. The efficiency of energy conversion in thermoelectric materials is determined by the thermoelectric figure of merit, ZT = S2σT/ κ (where S, σ, κ, and...
Thermoelectric (TE) materials can efficiently convert waste heat into electricity and vice versa. The efficiency of energy conversion in thermoelectric materials is determined by the thermoelectric figure of merit, ZT = S2σT/ κ (where S, σ, κ, and T represent the Seebeck coefficient, the electrical conductivity, the total thermal conductivity, and absolute temperature, respectively). To achieve a high figure of merit (ZT), thermoelectric materials must simultaneously exhibit high electrical conductivity (σ), a large Seebeck coefficient (S), and low thermal conductivity (κ). It is challenging to increase both electrical conductivity (σ) and the Seebeck coefficient (S) simultaneously, since they generally vary in opposite directions with changes in carrier concentration. Similarly, simultaneously enhancing electrical conductivity (σ) while suppressing thermal conductivity (κ) is challenging, since the electronic component of (κ) generally scales with (σ).
Tin selenide (SnSe) has emerged as one of the most promising lead-free TE materials because it is composed of earth-abundant, non-toxic elements and its intrinsically low lattice thermal conductivity. Single-crystalline SnSe exhibits an exceptional ZT of 2.6 at 923 K along the b-axis, resulting from its highly anisotropic layered orthorhombic structure (Pnma, No. 62) below 800 K and strongly anharmonic bonding. Nevertheless, despite the outstanding thermoelectric performance of SnSe single crystals, their intrinsic brittleness, the need for tightly controlled crystal growth conditions, and the high production cost have posed significant challenges for large-scale industrial application. To address these issues, research attention has increasingly turned toward the development of high-performance polycrystalline SnSe, which offers improved mechanical strength, easier fabrication, and greater potential for scalable production.
Therefore, in this study, we investigated the effect of multi-doping (Na, Cu) and (Na, Cu, and Sr) on SnSe-based materials that were synthesized through an annealing method followed by spark plasma sintering (SPS).
First, polycrystalline p-type Sn0.98Na0.02SeCux samples with copper (Cu) addition were prepared using an annealing process combined with spark plasma sintering (SPS). With Cu addition, both the carrier concentration and the carrier mobility exhibit slight enhancement due to Cu filling Sn vacancies and substituting Sn sites, which leads to an increase in electrical conductivity to get a high ZT value. The highest ZT value obtained in this work is around 0.54 at 723 K for the Sn0.98Na0.02SeCu0.01 sample measured along the direction perpendicular to the SPS compressing.