Modulation of photocurrent generation mechanisms in van der Waals materials for advanced optoelectronics devices

다국어 초록 (Multilingual Abstract)

Two-dimensional (2D) heterostructures have garnered intense research interest owing to their advanced characteristics compared to 2D homostructures. The 2D heterostructures not only combine the best of different ingredients in one structure to improve the performance of 2D material-based devices, but also facilitate the discovery of new physical effects at their interface. In the field of optoelectronics, different photocurrent mechanisms have been exploited in the heterojunctions, which play crucial roles in working principles of optoelectronic devices. Despite these advantages, achieving high-performance broadband phototransistors remains a challenge for 2D heterostructure-based devices. Furthermore, each heterostructure device typically operates using a single photocurrent mechanism. As a result, there is a need for innovative strategies to combine 2D materials and explore adaptable photocurrent mechanisms for the development of high-performance phototransistors across a wide detection range.
This study introduces various methods and interpretations for understanding photocurrent generation mechanisms in a heterojunction. Using d.c. photocurrent measurement, a high-performance broadband photodetector based on ReS2-2D Te heterojunction was successfully achieved by effectively controlling photoconductive and photogating effects. With the same structure, photovoltaic (PV) and photothermoelectric (PTE) effects were characterized in ReS2-2D Te p-n junction through a.c. photocurrent mapping measurement. In addition, our observations reveal different photodetection mechanisms within the heterostructure. Even more, by controlling drain-source and gate biases, we can selectively choose a main detection mechanism of the structure. Thus, the adaptive sensing of the light is possible, which is unprecedented. Another study on the heterostructure of WTe2-2D Te addressed that the structure consisted of photocurrent puddles that were different in nature. To homogenize the puddles, careful material selection based on thermal and electrical properties is essential because these puddles can interact counteractively. On the other hand, leveraging each photocurrent domain enables adaptive operation with both PV and PTE, enhancing device performance through the conversion of energy from multiple sources (light and waste heat), and enabling the detection of long-wavelength light through light-induced heating.
Our research unveils the coexistence of various photocurrent types in heterostructures. Distinguishing each mechanism is crucial, as it enables precise control and selection for diverse design purposes.

목차 (Table of Contents)

• Abstract 1
• CHAPTER I. INTRODUCTION 3
• 1.1 Introduction to two-dimensional materials 3
• 1.2 Developments and challenges of 2D material-based broadband photodetectors 4
• 1.3 Strategies for high-performance 2D material based-broadband photodetectors 6
• 1.4 Contribution of this dissertation for the development of 2D material based-broadband photodetectors 8
• 1.5 Reference 12
• CHAPTER II. THEORETICAL AND EXPERIMENTAL BACKGROUND 15
• 2.1 Fundamental photocurrent mechanisms in 2D materials 15
• 2.2 Exponential parameter, α-photoconductive and photogating effects characterization 19
• 2.3 Schottky barrier height-photovoltaic effect characterization 20
• 2.3.1 Arrhenius plot 20
• 2.3.2 Richardson plot 21
• 2.4 Seebeck coefficient-photothermoelectric effect characterization 22
• 2.4.1 Electrical conductivity dependent Seebeck coefficient 22
• 2.4.2 Electrical conductivity dependent Seebeck coefficient measurement 23
• 2.5 Photocurrent characterization methods 24
• 2.5.1 The d.c. photocurrent measurement 24
• 2.5.2 The a.c. photocurrent mapping measurement 25
• 2.6 Hydrothermal synthesis of Tellurene 26
• 2.7 Reference 28
• CHAPTER III. CONTROLLABLE PHOTOGATING AND PHOTOCONDUCTIVE EFFECTS IN ReS2-2D Te HETEROJUNCTION FOR HIGH-PERFORMANCE BROADBAND PHOTODETECTORS 31
• 3.1 Introduction 31
• 3.2 Experiment 33
• 3.2.1 Device Fabrication 33
• 3.2.2 Characterization and measurement 34
• 3.3 Results and discussions 34
• 3.3.1 Optical and electrical characterizations of ReS2-2D Te transistor 35
• 3.3.2 Back-gate controlled photocurrent mechanism in ReS2-2D Te phototransistor 39
• 3.3.3 Photocurrent behavior of ReS2-2D Te phototransistor 42
• 3.3.4 Power-dependent photoresponse of ReS2-2D Te phototransistor 45
• 3.3.5 Performance of ReS2-2D Te photodetector from visible to NIR range 50
• 3.4 Conclusion 53
• 3.5 Reference 54
• CHAPTER IV. UNVEILING PHOTOVOLTAIC AND PHOTOTHERMOELECTRIC EFFECTS IN ReS2-2D Te P-N HETEROJUNCTION 62
• 4.1 Introduction 62
• 4.2 Experiment 65
• 4.2.1 Device fabrication 65
• 4.2.2 Characterization and measurement 66
• 4.3 Results and discussions 68
• 4.3.1 Electrical properties of ReS2-2D Te heterojunction 68
• 4.3.2 Photovoltaic effect in ReS2 phototransistor 69
• 4.3.3 Photothermoelectric effect in 2D Te phototransistor 73
• 4.3.4 Energy band characterization of ReS2-2D Te heterojunction 78
• 4.3.5 Photovoltaic and photothermoelectric effects in ReS2-2D Te phototransistor 80
• 4.3.6 Enhanced photothermoelectric effect in ReS2-2D Te phototransistor by forward bias 84
• 4.3.7 Enhanced photovoltaic effect in ReS2-2D Te phototransistor by reversed bias 85
• 4.4 Conclusion 89
• 4.5 Reference 90
• CHAPTER V. UNUSUAL PHOTOTHERMOELECTRIC EFFECT IN SEMIMETAL-SEMICONDUCTOR WTe2-2D Te HETEROJUNCTION 95
• 5.1 Introduction 95
• 5.2 Experiment 98
• 5.2.1 Device Fabrication 98
• 5.2.2 Characterization and measurement 99
• 5.3 Results and discussions 100
• 5.3.1 Optical and electrical properties of WTe2-2D Te heterojunction 100
• 5.3.2 Seebeck coefficient measurements of WTe2 and 2D Te 103
• 5.3.3 Unusual photothermoelectric effect in WTe2-2D Te phototransitor at zero drain-source bias 104
• 5.3.4 Effect of drain-source bias on pre-existed photovoltaic and photothermoelectric voltages 109
• 5.3.5 Photovoltaic effect on 2D Te assisted by WTe2 at negative drain-source bias 110
• 5.3.6 Typical photothermoelectric effect on 2D Te at positive drain-source bias 112
• 5.4 Conclusion 115
• 5.5 Reference 116
• CHAPTER VI. SUMMARY OF DISSERTATION 121

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