결정질 실리콘 태양전지 응용을 위한 SiN_x 및 SiO₂ 박막의 패시베이션 특성 연구 = Passivation properties of SiN_x and SiO₂ thin films for the application of crystalline Si solar cells

다국어 초록 (Multilingual Abstract)

We have investigated the passivation property of $SiN_x$ and $SiO_2$ thin films formed using various process conditions for the application of crystalline Si solar cells. An increase in the thickness of $SiN_x$ deposited using plasma enhanced chemical vapor deposition (PECVD) led to the improvement of passivation quality. This could be associated with the passivation of Si dangling bonds by hydrogen atoms which were supplied during PECVD deposition. The $SiO_2$ thin films grown using dry oxidation process exhibited better passivation behavior than those using wet oxidation process, implying the dry oxidation process was more effective in the formation of high quality $SiO_2$ thin films. The relative effective life time gradually decreased with increasing dry oxidation temperature. Such a degradation of passivation behavior could be attributed to the increase in interface trap density caused by thermal damages.